Electron-electron relaxation effect on Auger recombination in direct-band semiconductors
نویسندگان
چکیده
منابع مشابه
Electron-Hole Recombination Rates for Auger Scattering in Graphene
We calculate electron-hole recombination rates for Auger scattering in Graphene. The conduction and valence band dispersion relation in Graphene together with energy and momentum conservation requirements restrict the phase space for Auger processes so that electron-hole recombination times can be much longer than 1 ps for electron-hole densities smaller than 1012 cm−2.
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2001
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.64.073205